Schottky properties of CuInSe2 single crystals grown by the horizontal Bridgman method with controlling Se vapor pressure

Journal of Physics and Chemistry of Solids

Volumn 64, Issue 9-10, 2003, Pages 1825-1829

  Matsushita, Hiroaki ^a   Tojo, Yukio ^b   Takizawa, Takeo ^b  

^a TOKAI UNIVERSITY   (Japan)

^b NIHON UNIVERSITY   (Japan)

Author keywords

CuInSe2; Defect physics; Etching; Hall effect; Schottky barrier

Indexed keywords

CAPACITANCE; COPPER COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; HALL EFFECT; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE;

BRIDGMAN METHOD;

SINGLE CRYSTALS;

EID: 0041736483     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00247-6     Document Type: Conference Paper

References (11)

1. Chan C.L., Shih I. J. Appl. Phys. 68:1990;156.
2. Koscielniak-Mucha B., Opanowicz A. Phys. Stat. Sol. A. 141:1994;K67.
3. Magomedov M.A., Prochukhan V.D., Rud Y.V. Sov. Phys. Semicond. 26:1992;1123.
4. Matsushita H., Takizawa T. J. Cryst. Growth. 160:1996;71.
5. Matsushita H., Iwabuchi A., Takizawa T., Endo S. Cryst. Res. and Technol. 31:1996;77.
6. Li A.L., Shih I. J. Elec. Mater. 22:1993;195.
7. Abou-Elfotouh F.A., Kazmerski L.L., Matson R.J., Dunlavy D.J., Coutts T.J. J. Vac. Sci. Technol. A. 8:1990;3251.
8. Moon E. J. Elec. Mater. 22:1993;275.
9. Endo S., Irie T. Solar Cells. 16:1986;1.
10. Matsushita H., Takizawa T. Jpn. J. Appl. Phys. 37:1998;4258.
11. Fonash S.J. J. Appl. Phys. 54:1983;1966.