Nonvolatile silicon memory using GeO x -cladded Ge quantum dots self-assembled on SiO 2 and lattice-matched II-VI tunnel insulator

Journal of Electronic Materials

Volumn 40, Issue 8, 2011, Pages 1769-1774

  Gogna, M ^a   Suarez, E ^a   Chan, P Y ^a   Al Amoody, F ^a   Karmakar, S ^a   Jain, F ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Ge quantum dot gate nonvolatile memory; GeO x cladded Ge quantum dots; Germanium quantum dots; quantum dot gate nonvolatile memory; quantum dot nonvolatile memory

Indexed keywords

GE QUANTUM DOT; GERMANIUM QUANTUM DOTS; NON-VOLATILE MEMORIES; QUANTUM DOT GATE NONVOLATILE MEMORY; QUANTUM DOT NONVOLATILE MEMORY;

GERMANIUM; GERMANIUM OXIDES; NONVOLATILE STORAGE; SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80051579889     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1685-y     Document Type: Conference Paper

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