Characterization of 4H-SiC epitaxial layers and high-resistivity bulk crystals for radiation detectors

IEEE Transactions on Nuclear Science

Volumn 59, Issue 4 PART 3, 2012, Pages 1591-1596

  Mandal, Krishna C ^a   Muzykov, Peter G ^a   Krishna, Ramesh M ^a   Terry, J Russell ^b  

^a The Department of Mechanical Engineering   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Defects; electron beam induced current (EBIC); semi insulating (SI); silicon carbide (SiC); soft X ray detectors; thermally stimulated current (TSC)

Indexed keywords

4H-SIC SUBSTRATE; BULK CRYSTALS; CORRELATION STUDIES; CURRENT-VOLTAGE MEASUREMENTS; DEEP LEVEL CENTERS; ELECTRICAL CHARACTERIZATION; ELECTRON TRAP CENTER; ELECTRON-BEAM-INDUCED CURRENT; HIGH TEMPERATURE; HIGH-PURITY; INTRINSIC DEFECTS; IV CHARACTERISTICS; N-TYPE EPITAXIAL LAYERS; RESISTIVITY MEASUREMENT; RESPONSIVITY; SEMI-INSULATING; SIC DETECTORS; SOFT X-RAY; SOFT X-RAY DETECTORS; THERMALLY STIMULATED CURRENT; THERMALLY STIMULATED CURRENT SPECTROSCOPY; THREADING DISLOCATION; TRAP FILLING; VAN DER PAUW;

CHEMICAL VAPOR DEPOSITION; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; EPITAXIAL GROWTH; OPTICAL DATA STORAGE; OPTICAL MICROSCOPY; RADIATION DETECTORS; SILICON CARBIDE; THERMOLUMINESCENCE;

EPITAXIAL LAYERS;

EID: 84865399363     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2202916     Document Type: Article

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