HTCVD growth of semi-insulating 4H-SiC crystals with low defect density

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Ellison, A ^a   Magnusson, B ^a   Hemmingsson, C ^a   Magnusson, W ^a   Iakimov, T ^a   Storasta, L ^a   Henry, A ^a   Henelius, N ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HEAT RESISTANCE; HIGH TEMPERATURE EFFECTS; INSULATING MATERIALS; OPTICAL PROPERTIES; SUBLIMATION;

DEFECT DENSITY; GAS FED SUBLIMATION; MICROPIPE CLOSING; ROOM TEMPERATURE RESISTIVITY; SEMIINSULATING CRYSTALS; SURFACE PREPARATION; TRAPPING EFFECTS;

SILICON CARBIDE;

EID: 0008859170     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (25)