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Volumn 34, Issue 4, 2005, Pages 336-340

Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

Author keywords

High purity semi insulating (HPSI) 4H SiC substrates; Impurity and defect related traps; Thermally stimulated current (TSC) spectroscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DATA ACQUISITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 18144402863     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0106-5     Document Type: Conference Paper
Times cited : (32)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.