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Volumn 34, Issue 4, 2005, Pages 336-340
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Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates
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Author keywords
High purity semi insulating (HPSI) 4H SiC substrates; Impurity and defect related traps; Thermally stimulated current (TSC) spectroscopy
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DATA ACQUISITION;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
GALLIUM NITRIDE;
POINT DEFECTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
4H-SIC SUBSTRATES;
HIGH-PURITY SEMI-INSULATING (HPSI);
IMPURITY-AND DEFECT-RELATED TRAPS;
THERMALLY STIMULATED CURRENT (TSC) SPECTROSCOPY;
SILICON CARBIDE;
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EID: 18144402863
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-005-0106-5 Document Type: Conference Paper |
Times cited : (32)
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References (13)
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