Characterization of deep centers in bulk n-type 4H-SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 706-709

  Fang, Z Q ^a,b   Look, D C ^a,b   Saxler, A ^a   Mitchel, W C ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

Bulk 4H SiC; DLTS; Intrinsic and extrinsic defects; Nitrogen levels

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC FIELD EFFECTS; HALL EFFECT; NITROGEN; SEMICONDUCTOR DOPING;

NITROGEN LEVELS;

SILICON CARBIDE;

EID: 0035678496     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00876-6     Document Type: Article

References (13)