Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Muzykov, Peter G ^a   Krishna, Ramesh M ^a   Mandal, Krishna C ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT POLARITY; DEEP LEVEL; DEEP LEVEL CENTERS; DICHLOROSILANES; ELECTRIC FIELD REVERSAL; HIGH PURITY; INTRINSIC DEFECTS; N-TYPE EPITAXIAL LAYERS; ROOM TEMPERATURE; SEMI-INSULATING; THERMALLY STIMULATED CURRENT SPECTROSCOPY; TRANSFER LENGTH METHODS;

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMOLUMINESCENCE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84855978527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3675513     Document Type: Article

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