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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 463-466

Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

(4) Pintilie, I a,b Pintilie, L a,b Irmscher, K a Thomas, B c

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

b NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

c SiCED Electronics Development GmbH and Co KG (Germany)

Author keywords

4H SiC; Deep Levels; Hot Wall CVD

Indexed keywords

ARSENIC; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRON TRAPS; HYDROGEN; IONIZATION; SILICON WAFERS;

EPITAXIAL LAYERS;

SILICON CARBIDE;

EID: 18744431001 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.463 Document Type: Conference Paper

Times cited : (21)

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