High resistivity measurement of SiC wafers using different techniques

Journal of Electronic Materials

Volumn 32, Issue 6, 2003, Pages 505-510

  Muzykov, P G ^a   Khlebnikov, Y I ^a   Regula, S V ^b   Gao, Y ^b   Sudarshan, T S ^b  

^a Bandgap Technologies Inc   (United States)

^b University of South Carolina   (United States)

Author keywords

Contactless resistivity measurement; Four point probe method; Resistivity; Silicon carbide; Van der Pauw method

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; NONDESTRUCTIVE EXAMINATION;

CONTACTLESS RESISTIVITY MEASUREMENT METHOD; FOUR POINT PROBE METHODS; GRAPHITE CONTACTS; HIGH TEMPERATURE VAN DER PAUW METHOD; ROON-TEMPERATURE HALL CHARACTERIZATION;

SILICON CARBIDE;

EID: 0038452459     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0134-y     Document Type: Article

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