Electron-beam-induced current observed for dislocations in diffused 4H-SiC P-N diodes

Applied Physics Letters

Volumn 84, Issue 9, 2004, Pages 1576-1578

  Maximenko, S ^a   Soloviev, S ^a   Cherednichenko, D ^a   Sudarshan, T ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVITY; ELECTRON-BEAM-INDUCED CURRENT (EBIC) MODES;

CARRIER CONCENTRATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC POTENTIAL; ELECTRON BEAMS; IMAGE ANALYSIS; OHMIC CONTACTS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SECONDARY ION MASS SPECTROMETRY;

SEMICONDUCTOR DIODES;

EID: 1642635079     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652229     Document Type: Article

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