Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

Materials Letters

Volumn 65, Issue 5, 2011, Pages 911-914

  Muzykov, Peter G ^a   Krishna, Ramesh ^a   Das, Sandip ^a   Hayes, Timothy ^a   Sudarshan, Tangali S ^a   Mandal, Krishna C ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Dislocations; EBIC; Electron beam induced current; KOH etching; Semi insulating; Silicon carbide

Indexed keywords

DISLOCATIONS; EBIC; ELECTRON BEAM INDUCED CURRENT; KOH ETCHING; SEMI-INSULATING;

ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONS; ETCHING; INDUCED CURRENTS; POTASSIUM HYDROXIDE; RADIATION DETECTORS; SCREWS; SILICON CARBIDE; SINGLE CRYSTALS;

SCREW DISLOCATIONS;

EID: 78651357470     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2010.11.074     Document Type: Article

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