Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Applied Physics Letters

Volumn 100, Issue 3, 2012, Pages

  Muzykov, Peter G ^a   Krishna, Ramesh M ^a   Mandal, Krishna C ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H-SIC SUBSTRATE; CURRENT CONDUCTION; DEEP LEVEL CENTERS; DICHLOROSILANES; INJECTED CARRIERS; INJECTED ELECTRONS; IV CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCES; SEMI-INSULATING; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENCE OF CURRENT; THERMALLY STIMULATED CURRENT;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84856418454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3676270     Document Type: Article

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