Defects in high-purity semi-insulating SiC

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 437-442

  Son, N T ^a   Magnusson, B ^a,b   Zolnai, Z ^a,c   Ellison, A ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Antisite; Carrier compensation; Defect; EPR; Photoluminescence; Semi insulating; Vacancy

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DEFECTS; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SUBSTRATES;

ANTISITE; CARRIER COMPENSATION; SEMI-INSULATING; VACANCY;

SILICON CARBIDE;

EID: 8744239282     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.437     Document Type: Conference Paper

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