Characterization of semi-insulating 4H silicon carbide for radiation detectors

IEEE Transactions on Nuclear Science

Volumn 58, Issue 4 PART 2, 2011, Pages 1992-1999

  Mandal, Krishna C ^a   Krishna, Ramesh M ^a   Muzykov, Peter G ^a   Das, Sandip ^a   Sudarshan, Tangali S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Defects; electron beam induced current; radiation detectors; semi insulating; silicon carbide; thermally stimulated current

Indexed keywords

4H SILICON CARBIDE; CHEMICAL ETCHING; CONDUCTION BAND EDGE; CROSS-POLARIZED; DEEP LEVEL CENTERS; DETECTOR FABRICATION; ELECTRON BEAM INDUCED CURRENT; HIGH TEMPERATURE PEAKS; HIGH TEMPERATURE RESISTIVITY; INTRINSIC DEFECTS; LITERATURE DATA; LOW ENERGY X RAYS; LOW-LEAKAGE CURRENT; NUCLEAR DETECTION; SEMI-INSULATING; SIC DETECTORS; THERMALLY STIMULATED CURRENT;

ACTIVATION ENERGY; AMERICIUM; CARRIER LIFETIME; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON MOBILITY; INSULATION; RAMAN SPECTROSCOPY; SCREW DISLOCATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON DETECTORS; SILICON WAFERS; THERMOLUMINESCENCE; X RAY DIFFRACTION;

RADIATION DETECTORS;

EID: 84860389294     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2152857     Document Type: Article

References (18)

1. F. Nava, G. Bertuccio, A. Cavallini, and E. Vittone, "Silicon carbide and its use as a radiation detector material," Meas. Sci. Technol., vol. 19, pp. 102001-1-25, 2008.
2. K. C. Mandal, P. G. Muzykov, Z. Laney, R. Krishna, S. Das, and T. S. Sudarshan, "Radiation detectors based on 4H semi-insulating silicon carbide," Proc. SPIE, vol. 7805, pp. 78050U1-78050U8, 2010.
3. F. H. Ruddy, J. G. Seidel, H. Chen, A. R. Dulloo, and S. Ryu, "Highresolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors," IEEE Trans. Nucl. Sci., vol. 53, pp. 1713-1718, 2006.
4. F. H. Ruddy, A. R. Dulloo, J. G. Seidel, M. K. Das, S. Ryu, and A. K. Agarwal, "The fast neutron response of 4H silicon carbide radiation detectors," IEEE Trans. Nucl. Sci., vol. 53, pp. 1666-1670, 2006.
5. M. Rogalla, K. Runge, and A. Söldner-Rembold, "Particle detectors based on semi-insulating silicon carbide," Nucl. Phys. B, vol. 78, pp. 516-520, 1999.
6. A. Shrivastava, P. B. Klein, E. R. Glaser, J. D. Caldwell, A. V. Bolotnikov, and T. S. Sudarshan, "Long carrier lifetime in 4H-SiC epilayers using chlorinated precursors," Mater. Sci. Forum, vol. 615-617, pp. 291-294, 2009.
7. W. C. Mitchel, R. Perrin, J. Goldstein, A. Saxler,M. Roth, S. R. Smith, and J. S. Solomon, "Fermi level control and deep levels in semi-insulating 4H-SiC," J. Appl. Phys., vol. 86, pp. 5040-5044, 1999.
8. P. G. Muzykov, R. Krishna, S. Das, T. Hayes, T. S. Sudarshan, and K. C. Mandal, "Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current," Mater. Lett., vol. 65, pp. 911-914, 2011.
9. J. R. Jenny, St. G. Müller, A. Powell, V. F. Tsvetkov, H. M. Hobgood, R. C. Glass, and C. H. Carter, Jr., "High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method," J. Electron. Mater., vol. 31, pp. 366-369, 2002.
10. Z.-Q. Fang, B. Claflin, D. C. Look, L. Polenta, and W. C. Mitchel, "Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates," J. Electron. Mater., vol. 34, pp. 336-340, 2005.
11. D. C. Look, "The electrical and photoelectronic properties of semiinsulating GaAs," Semicond. Semimet., vol. 19, pp. 75-170, 1983.
12. M. Pavlovic and U. V. Desnica, "Precise determination of deep trap signatures and their relative and absolute concentrations in semi-insulating GaAs," J. Appl. Phys., vol. 84, pp. 2018-2024, 1998.
13. J. G. Simmons and G. W. Taylor, "High-field isothermal currents and thermally stimulated currents in insulators having discrete trapping levels," Phys. Rev. B, vol. 5, pp. 1619-1629, 1972.
14. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. Hoboken, NJ: Wiley, 2006.
15. A. A. Lebedev, "Deep level centers in silicon carbide: A review," Semiconductors, vol. 33, pp. 107-130, 1999.
16. S. Ha, W. M. Vetter, M. Dudley, and M. Skowronski, "A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers," Mater. Sci. Forum, vol. 389-393, pp. 443-446, 2002.
17. D. C. Look, Z.-Q. Fang, S. Soloviev, T. S. Sudarshan, and J. J. Boeckl, "Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC," Phys. Rev. B, vol. 69, pp. 1952051-1952054, 2004.
18. S. Nakashima and H. Harima, "Raman investigation of SiC polytypes," Phys. Status Solidi(a), vol. 162, pp. 39-64, 1997.