High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 366-369

  Jenny, J R ^a   Muller St G ^a   Powell, A ^a   Tsvetkov, V F ^a   Hobgood, H M ^a   Glass, R C ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; EPR; High purity semi insulating; HPSI; Physical vapor transport; Resistivity; Seeded sublimation; SIMS; Thermal conductivity

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL GROWTH; PARAMAGNETIC RESONANCE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; SUBLIMATION; THERMAL CONDUCTIVITY;

SEEDED-SUBLIMATION METHOD;

SILICON CARBIDE;

EID: 0036575441     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0084-9     Document Type: Article

References (16)