All-InGaN phosphorless white light emitting diodes: An efficiency estimation

Journal of Lightwave Technology

Volumn 30, Issue 17, 2012, Pages 2853-2862

  Kölper, Christopher ^a   Sabathil, Matthias ^a   Mandl, Martin ^a   Strassburg, Martin ^a   Witzigmann, Bernd ^b  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

Efficiency droop; GaN; LED; nanorods; nitrides; photon recycling; white light

Indexed keywords

ACTIVE LAYER; BULK-LIKE; EFFICIENCY ESTIMATION; EMISSION WAVELENGTH; GAN; MATERIAL SYSTEMS; NON-RADIATIVE; PHOTON RECYCLING; THEORETICAL STUDY; THIN QUANTUM WELLS; THIN-FILM STRUCTURE; WHITE LIGHT; WHITE LIGHT EMITTING DIODES;

EFFICIENCY; GALLIUM NITRIDE; NANORODS; NITRIDES; PHOTONS;

LIGHT EMITTING DIODES;

EID: 84865312229     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2012.2206561     Document Type: Article

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