Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7597, Issue , 2010, Pages

  Sacconi, F ^a   Penazzi, G ^a   Pecchia, A ^a   Auf Der Maur, M ^a   Di Carlo, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

EFA; ETB; LED; Nanocolumn; Nitrides; Strain

Indexed keywords

COLUMN BOUNDARIES; EFA; ETB; HOLE STATE; INGAN/GAN; IV CHARACTERISTICS; MATERIAL PARAMETER; MULTISCALES; NANOCOLUMN; OPTICAL EMISSION SPECTRA; PIN DIODE; POLARIZATION FIELD; QUANTUM DISKS; RELAXATION EFFECT; SOFTWARE TOOL; STRAIN MAPS;

DISKS (STRUCTURAL COMPONENTS); ELECTROOPTICAL DEVICES; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTOELECTRONIC DEVICES; QUANTUM CHEMISTRY; TRANSPORT PROPERTIES;

OPTICAL PROPERTIES;

EID: 77953311306     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.840533     Document Type: Conference Paper

References (8)

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