Monolitically grown dual wavelength InGaN LEDs for improved CRI

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2396-2398

  Stauss, P ^a   Mandl, M ^a   Rode, P ^a   Laubsch, A ^a   Biebersdorf, A ^a   Windisch, R ^a   Galler, B ^a   Drechsel, P ^a   Steegmuller U ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

CRI; EQE; InGaN; LED

Indexed keywords

CRI; DUAL WAVELENGTH; EMISSION SPECTRUMS; EQE; HIGH POWER LED; INGAN; INGAN LED; LAYER STRUCTURES; LIGHT EXTRACTION; PHOTOLUMINESCENCE SPECTRUM; SIMULATED DATA; THINGAN;

EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; PHOTONS; SOLIDS;

GALLIUM COMPOUNDS;

EID: 79960728759     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001073     Document Type: Article

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