Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 267-271

  Lundin, W V ^a,b   Nikolaev, A E ^a,b   Sakharov, A V ^a,b   Zavarin, E E ^a,b   Valkovskiy, G A ^a   Yagovkina, M A ^a   Usov, S O ^b   Kryzhanovskaya, N V ^a,b   Sizov, V S ^a,b   Brunkov, P N ^a   Zakgeim, A L ^b   Cherniakov, A E ^b   Cherkashin, N A ^c   Hytch, M J ^c   Yakovlev, E V ^d   Bazarevskiy, D S ^d   Rozhavskaya, M M ^b   Tsatsulnikov, A F ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Russian Academy of Sciences   (Russian Federation)

^c CEMES CNRS   (France)

^d SOFT IMPACT LTD   (Russian Federation)

Author keywords

A1. Nanostructures; A3. MOCVD; B1. Nitrides; B3. LEDs

Indexed keywords

A1. NANOSTRUCTURES; A3. MOCVD; B1. NITRIDES; B3. LEDS; ELECTROLUMINESCENCE EFFICIENCIES; EXTERNAL QUANTUM EFFICIENCY; FLIP CHIP; GAN BUFFER; GREEN LEDS; GROWTH REGIME; INGAN/GAN; KEY ELEMENTS; LOW TEMPERATURES; P-CONTACTS; SHORT-PERIOD SUPERLATTICES; SHORT-WAVELENGTH; SINGLE QUANTUM WELL; STRUCTURE DESIGN; STRUCTURE PROPERTY;

GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

QUANTUM EFFICIENCY;

EID: 79551681366     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.043     Document Type: Article

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