Luminescence and efficiency optimization of InGaN/GaN core-shell nanowire LEDs by numerical modelling

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8255, Issue , 2012, Pages

  Römer, Friedhard ^a   Deppner, Marcus ^a   Andreev, Zhelio ^a   Kölper, Christopher ^a,b   Sabathil, Matthias ^b   Straßburg, Martin ^b   Ledig, Johannes ^c   Li, Shunfeng ^c   Waag, Andreas ^c   Witzigmann, Bernd ^a  

^a UNIVERSITY OF KASSEL   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Computational electronics; Core shell; Gallium nitride; Kp Method; Light emitting diode; Nano structure

Indexed keywords

COMPUTATIONAL ELECTRONICS; COMPUTATIONAL STUDIES; CORE-SHELL; CORE-SHELL NANOWIRES; CURRENT INJECTIONS; DESIGN OPTIMIZATION; DRIFT DIFFUSION TRANSPORT; EFFICIENCY OPTIMIZATION; EXTERNAL EFFICIENCY; INGAN/GAN; KP-METHOD; NUMERICAL MODELLING; PHYSICAL SIMULATOR; PROBLEM SOLVERS; QUANTIZATION EFFECTS; RE-ABSORPTION; SELF-CONSISTENCY;

ANISOTROPY; EFFICIENCY; GALLIUM NITRIDE; LUMINESCENCE; NANOWIRES; OPTIMIZATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; SHELLS (STRUCTURES);

LIGHT EMITTING DIODES;

EID: 84859976609     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.908207     Document Type: Conference Paper

References (16)

1. Baur, J., Baumann, F., Peter, M., Engl, K., Zehnder, U., Off, J., Kuemmler, V., Kirsch, M., Strauss, J., Wirth, R., Streubel, K., and Hahn, B., "Status of high efficiency and high power ThinGaN-LED development," Physica Status Solidi (C) 6(S2), S905-S908 (2009).
2. Piprek, J., "Efficiency droop in nitride-based light-emitting diodes," Physica Status Solidi (a) 207(10), 2217-2225 (2010).
3. Laubsch, A., Sabathil, M., Bergbauer, W., Strassburg, M., Lugauer, H., Peter, M., Lutgen, S., Linder, N., Streubel, K., Hader, J., Moloney, J. V., Pasenow, B., and Koch, S. W., "On the origin of IQE-droop in InGaN LEDs," Physica Status Solidi (C) 6(S2), S913-S916 (2009).
4. Waag, A., Wang, X., Fündling, S., Ledig, J., Erenburg, M., Neumann, R., Al Suleiman, M., Merzsch, S., Wei, J., Li, S., Wehmann, H. H., Bergbauer, W., Straßburg, M., Trampert, A., Jahn, U., and Riechert, H., "The nanorod approach: GaN NanoLEDs for solid state lighting," Physica Status Solidi (C) 8(7-8), 2296-2301 (2011).
5. Bavencove, A., Salomon, D., Lafossas, M., Martin, B., Dussaigne, A., Levy, F., André, B., Ferret, P., Durand, C., Eymery, J., and Others, "Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate," Electronics letters 47(13), 765-767 (2011).
6. Steiger, S., Veprek, R. G., and Witzigmann, B., "Unified simulation of transport and luminescence inoptoelectronic nanostructures," Journal of Computational Electronics 7(4), 509-520 (2008).
7. Veprek, R. G., Steiger, S., and Witzigmann, B., "Reliable kp band structure calculation for nanostructures using finite elements," Journal of Computational Electronics 7(4), 521-529 (2008).
8. Gummel, H., "A self-consistent iterative scheme for one-dimensional steady state transistor calculations," Electron Devices, IEEE Transactions on 11(10), 455-465 (1964).
9. Trellakis, A., Galick, A., Pacelli, A., and Ravaioli, U., "Iteration scheme for the solution of the twodimensional Schrödinger-Poisson equations in quantum structures," Journal of Applied Physics 81(12), 7880 (1997).
10. Park, S.-H. and Chuang, S.-L., "Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors," Physical Review B 59(7), 4725-4737 (1999).
11. Chuang, S. L., [Physics of Photonic Devices], John Wiley (2007).
12. Kölper, C., Sabathil, M., Witzigmann, B., Römer, F., Bergbauer, W., and Strassburg, M., "Optical properties of individual GaN nanorods for light emitting diodes: influence of geometry, materials, and facets," Proceedings of SPIE 7933, 14 (2011).
13. Kumakura, K., Makimoto, T., Kobayashi, N., Hashizume, T., Fukui, T., and Hasegawa, H., "Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence," Applied Physics Letters 86(5), 052105 (2005).
14. Ambacher, O., Majewski, J., Miskys, C., Link, A., Hermann, M., Eickhoff, M., Stutzmann, M., Bernardini, F., Fiorentini, V., Tilak, V., and Others, "Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures," Journal of physics: condensed matter 14, 3399-3434 (2002). (Pubitemid 34404598)
15. Scheibenzuber, W., Schwarz, U., Veprek, R., Witzigmann, B., and Hangleiter, a., "Calculation of optical eigenmodes and gain in semipolar and nonpolar InGaN/GaN laser diodes," Physical Review B 80(11), 1-16 (2009).
16. Kölper, C., Sabathil, M., Römer, F., Mandl, M., Strassburg, M., and Witzigmann, B., "Core-Shell InGaN Nanorod Light Emitting Diodes: Electronic and Optical Device Properties," IEEE Journal of Quantum Electronics, submitted for publication.