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Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

Donor behavior of Sb in ZnO

(8) Liu, H Y a Izyumskaya, N a Avrutin, V a Ozgur U a Yankovich, A B b Kvit, A V b Voyles, P M b Morkoc H a

a Virginia Commonwealth University (United States)

b UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION RANGES; ELECTRICAL BEHAVIORS; ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; IONIZED IMPURITY SCATTERING; LOW TEMPERATURES; OXYGEN PRESSURE; OXYGEN SITE; ROOM TEMPERATURE; SHALLOW DONORS; STRUCTURAL DATA; SUB-LATTICES; TEMPERATURE DEPENDENT; ZNO;

DEFECTS; ELECTRON MOBILITY; MOLECULAR BEAM EPITAXY; OXYGEN; ZINC;

ZINC OXIDE;

EID: 84865204713 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742984 Document Type: Article

Times cited : (36)

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