Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 25, 2001, Pages 4139-4141

  Nakahara, K ^a   Takasu, H ^a   Fons, P ^b   Yamada, A ^b   Iwata, K ^b   Matsubara, K ^b   Hunger, R ^b   Niki, S ^b  

^a ROHM CO LTD   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035905196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1424066     Document Type: Article

References (10)

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