Doping asymmetry problem in ZnO: Current status and outlook

Proceedings of the IEEE

Volumn 98, Issue 7, 2010, Pages 1269-1280

  Avrutin, Vitaliy ^a   Silversmith, Donald J ^b   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

^b AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

Impurities; P type; Point defects; ZnO

Indexed keywords

BINDING ENERGY; ENERGY GAP; II-VI SEMICONDUCTORS; IMPURITIES; MAGNETIC SEMICONDUCTORS; POINT DEFECTS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CRITICAL REVIEW; CURRENT STATUS; DIRECT BAND GAP; EXCITON-BINDING ENERGY; N-TYPE CONDUCTIVITY; P-TYPE; SPECTRAL REGION; WIDE-GAP SEMICONDUCTOR;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 77953686222     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2010.2043330     Document Type: Conference Paper

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