Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy

Applied Physics A: Materials Science and Processing

Volumn 94, Issue 4, 2009, Pages 995-998

  Vaithianathan, V ^a   Asokan, K ^b   Park, Jae Young ^a   Kim, Sang Sub ^a  

^a Inha University   (South Korea)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DOPING (ADDITIVES); ELECTROMAGNETIC WAVE ABSORPTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY ABSORPTION; METALLIC FILMS; PHOSPHORUS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING ZINC COMPOUNDS; X RAY ABSORPTION; X RAY ANALYSIS; ZINC; ZINC OXIDE;

AS-GROWN; CHEMICAL VALENCES; LOCAL ELECTRONIC STRUCTURES; O K-EDGES; P TYPES; P-DOPED ZNO; PEAK INTENSITIES; PHOSPHORUS-DOPED; THERMAL-ANNEALING; VALENCE STATE; X-RAY ABSORPTION NEAR EDGE SPECTROSCOPIES; X-RAY ABSORPTION NEAR-EDGE STRUCTURE SPECTROSCOPIES; XANES SPECTRUM; ZNO; ZNO FILMS;

ABSORPTION SPECTROSCOPY;

EID: 59749101828     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4883-6     Document Type: Article

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