Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3385-3390

  Reuss, F ^a   Kirchner, C ^a   Gruber, Th ^a   Kling, R ^a   Maschek, S ^a   Limmer, W ^a   Waag, A ^a   Ziemann, P ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CRYSTAL STRUCTURE; GALLIUM; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR MATERIALS; ZINC OXIDE;

ELECTRICAL CHARACTERIZATION; POSTIMPLANTATION ANNEALING;

ION IMPLANTATION;

EID: 1942489249     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650899     Document Type: Article

References (18)

1. C. Kirchner, Th. Gruber, F. Reuß, K. Thonke, A. Waag, Ch. Gießen, and M. Heuken, J. Cryst. Growth 248, 20 (2002).
2. Yefan Chen, D. M. Bagnall, Hang-jun Koh, Ki-tae Park, Kenji Hiraga, Ziqiang Zhu, and Takafumi Yao, J. Appl. Phys. 84, 3912 (1998).
3. E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H.-C. Semmelhack, K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett. 82, 3901 (2003).
4. W. I. Park, Gyu-Chul Yi, and H. M. Jang, Appl. Phys. Lett. 79, 2022 (2001).
5. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, Appl. Phys. Lett. 78, 1237 (2001).
6. C. H. Park, S. B. Zhang, and Su-Huai Wei, Phys. Rev. B 66, 073 202 (2002).
7. Tesuya Yamamoto and Hiroshi Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 38, L166 (1999).
8. K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, Jpn. J. Appl. Phys., Part 2 36, L1453 (1997).
9. M. Joseph, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys., Part 2 38, L1205 (1999).
10. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
11. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, and S. Tanaka, Jpn. J. Appl. Phys., Part 2 41, L1281 (2002).
12. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
13. R. H. Callender, S. S. Sussman, M. Selders, and R. K. Chang, Phys. Rev. B 7, 3788 (1973).
14. J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1973).
15. K. Thonke, N. Kerwien, A. Wysmolek, M. Potemski, A. Waag, R. Sauer, Proceedings of the 26th ICPS, Edinburgh, 2002, edited by A. R. Long and J. H. Davies (IOP, Bristol, 2003), p. 22.
16. D. M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B. K. Meyer, S. B. Orlinskii, J. Schmidt, and P. G. Baranov, Phys. Rev. Lett. 88, 045 504 (2002).
17. A. Kaschner, U. Haboeck, Martin Strassburg, Matthias Strassburg, G. Kaczmarczyk, A. Hoffmann, C. Thomsen, A. Zeuner, H. R. Alves, D. M. Hofmann, and B. K. Meyer, Appl. Phys. Lett. 80, 1909 (2002).
18. A. Zeuner, H. Alves, D. M. Hofmann, B. K. Meyer, A. Hoffmann, U. Haboeck, M. Strassburg, and M. Dworzak, Phys. Status Solidi B 234, R7 (2002).