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Volumn 111, Issue 10, 2012, Pages

Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; DOMINANT MECHANISM; ELECTRON TRANSPORT; GA FLUX; GRAIN BOUNDARY SCATTERING; GRAIN SIZE; HALL MEASUREMENTS; HEAVILY DOPED; HIGH-CRYSTALLINE QUALITY; IONIZED IMPURITY SCATTERING; LOW ANGLE BOUNDARIES; MICROSTRUCTURAL INVESTIGATION; MOBILITY VALUE; OXYGEN-RICH CONDITIONS; POLAR OPTICAL PHONON SCATTERING; QUANTUM MECHANICAL; ROOM TEMPERATURE; SCATTERING MECHANISMS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THERMIONIC EFFECTS; TRANSPORT MEASUREMENTS; ZNO; ZNO LAYERS;

EID: 84862139932     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720456     Document Type: Conference Paper
Times cited : (41)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.