Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE

Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 3-4, 2010, Pages 70-72

  Liu, H Y ^a   Avrutin, V ^a   Izyumskaya, N ^a   Reshchikov, M A ^b   Ozgur U ^a   Morkoc H ^b  

^a Virginia Commonwealth University   (United States)

^b VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

Diffraction; Electrical properties; II VI semiconductors; MBE; Optical properties

Indexed keywords

ABSORPTION EDGES; AS-GROWN; BLUE SHIFT; BURSTEIN-MOSS SHIFT; CRITICAL EFFECTS; DEPTH DISTRIBUTION; DONOR CONCENTRATIONS; ELECTRICAL PROPERTY; FILM PROPERTIES; HEAVILY DOPED; II-VI SEMICONDUCTOR; II-VI SEMICONDUCTORS; MBE; NONUNIFORM; OPTICAL TRANSPARENCY; OXYGEN-RICH CONDITIONS; PLASMA ASSISTED MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RICH CONDITIONS; THERMAL ACTIVATION; VISIBLE SPECTRAL RANGE; ZNO FILMS;

CARRIER CONCENTRATION; CONDUCTIVE FILMS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; ELECTRON MOBILITY; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXYGEN; PRESSURE EFFECTS; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 77950880786     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903410     Document Type: Article

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