Separation of laterally overgrown GaN template by using selective electrochemical etching

Journal of Alloys and Compounds

Volumn 542, Issue , 2012, Pages 59-62

  Jeon, Dae Woo ^a   Cho, Han Su ^a   Park, Jae Woo ^a   Jang, Lee Woon ^a   Kim, Myoung ^a   Jeon, Ju Won ^a   Ju, Jin Woo ^b   Baek, Jong Hyeob ^b   Lee, In Hwan ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Lift off GaN; Maskless ELO; Selective electrochemical etching

Indexed keywords

DISLOCATION DENSITIES; EPITAXIAL LATERAL OVERGROWTH; ETCHING RATE; GAN FILM; GAN LAYERS; GAN TEMPLATE; GLASS SUBSTRATES; LIFT-OFF GAN; LUMINESCENCE EFFICIENCIES; MASK LESS; OXALIC ACID; PHOTOLUMINESCENCE MEASUREMENTS; SAPPHIRE SUBSTRATES;

CONDUCTIVE FILMS; ELECTROCHEMICAL ETCHING; EPITAXIAL GROWTH; ORGANIC ACIDS; SAPPHIRE; SEPARATION; SUBSTRATES;

GALLIUM NITRIDE;

EID: 84865087661     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.07.016     Document Type: Article

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