Effect of in incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Journal of Alloys and Compounds

Volumn 540, Issue , 2012, Pages 46-48

  Zhao, D G ^a   Jiang, D S ^a   Le, L C ^a   Wu, L L ^a   Li, L ^a   Zhu, J J ^a,b   Wang, H ^a,b   Liu, Z S ^a   Zhang, S M ^a,b   Jia, Q J ^c   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Crystal growth; Nitride materials; X ray diffraction

Indexed keywords

EFFECT OF IN; ELECTROLUMINESCENCE PROPERTIES; GROWTH PARAMETERS; HIGH GROWTH TEMPERATURES; INGAN/GAN; INGAN/GAN MQWS; INTERFACE ROUGHNESS; NITRIDE MATERIALS; PEAK WAVELENGTH; STRUCTURAL QUALITIES; TRIMETHYLINDIUM;

CRYSTAL GROWTH; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTOR QUANTUM WELLS; VAPORS; X RAY DIFFRACTION;

ELECTROLUMINESCENCE;

EID: 84864415629     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.06.001     Document Type: Article

References (15)

1. S. Nakamura Science 281 1998 956 961
2. Y.S. Lin, K.J. Ma, C. Hsu, S.W. Feng, Y.C. Cheng, C.C. Liao, C.C. Yang, C.C. Chou, C.M. Lee, and J.I. Chyi Appl. Phys. Lett. 77 2000 2988 2990
3. T.S. Jenong, J.H. Kim, M.S. Han, K.Y. Lim, and C.J. Youn J. Cryst. Growth 280 2005 357 363
4. N. Johji, S. Lisa, F. Hidetoshi, K. Yoshihiro, and I. Kazuhiko Appl. Phys. Lett. 70 1997 3431 3433
5. Y.H. Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U.K. Mishra, and S.P. DenBaars Appl. Phys. Lett. 73 1998 1128 1130
6. D.G. Zhao, D.S. Jiang, J.J. Zhu, H. Wang, Z.S. Liu, S.M. Zhang, Q.J. Jia, and Hui Yang J. Alloys Compd. 489 2010 461 464
7. S. Keller, B.P. Keller, D. Kapolnek, A.C. Abare, H. Masui, L.A. Coldren, U.K. Mishra, and S.P. DenBaars Appl. Phys. Lett. 68 1996 3147 3149
8. A.T. Cheng, Y.K. Su, and W.C. Lai J. Cryst. Growth 298 2007 508 510
9. S.J. Xu, H. Wang, Q. Li, M.H. Xie, X.C. Wang, W.J. Fan, and S.L. Feng Appl. Phys. Lett. 77 2000 2130 2132
10. J.C. Zhang, D.S. Jiang, Q. Sun, J.F. Wang, Y.T. Wang, J.P. Liu, J. Chen, R.Q. Jin, J.J. Zhu, H. Yang, T. Dai, and Q.J. Jia Appl. Phys. Lett. 87 2005 071908
11. J. Feldmann, G. Peter, and E.O. Goek Phys. Rev. Lett. 59 1987 2337 2340
12. H.X. Jiang, E.X. Ping, P. Zhou, and J.Y. Lin Phys. Rev. B 41 1990 12949 12952
13. A. Dussaigne, B. Damilano, N. Grandjean, and J. Massies J. Cryst. Growth 251 2003 471 475
14. Shih-Wei Feng, Chin-Yi Tsai, Hsiang-Chen Wang, Hung-Cheng Lin, and Jen- Inn Chyi J. Cryst. Growth 325 2011 41 45
15. Shih-Wei Feng, Hung-Cheng Lin, Jen-Inn Chyi, Chin-Yi Tsai, C.J. Huang, Hsiang-Chen Wang, Fann-Wei Yang, and Yen-Sheng Lin Thin Solid Films 519 2011 6092 6096