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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2123-2126

Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off

(5) Goto, Hiroki a Lee, Hyun Jae a Lee, Seogwoo a Cho, Meoung Whan a Yao, Takafumi a

a TOHOKU UNIVERSITY (Japan)

Author keywords

Chemical lift off; Free standing GaN; GaN substrate; HVPE

Indexed keywords

BENDING RADIUS; CONCAVE SHAPE; CRYSTAL QUALITIES; FREE-STANDING GAN; GAN LAYERS; GAN SUBSTRATE; HVPE; MECHANICAL FRACTURING; MULTI DOMAINS; THICK LAYERS;

ALUMINUM; GALLIUM NITRIDE; SUPERCONDUCTING FILMS; THICK FILMS;

SUBSTRATES;

EID: 79960741174 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201001026 Document Type: Article

Times cited : (1)

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