SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 22, 2009, Pages

Doping selective lateral electrochemical etching of GaN for chemical lift-off

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; EPITAXIAL STRUCTURE; ETCH RATES; GAN EPITAXIAL LAYERS; GAN LAYERS; N-TYPE DOPING; OXALIC ACID; P-TYPE; SELECTIVE ETCHING;

DOPING (ADDITIVES); EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

ELECTROCHEMICAL ETCHING;

EID: 66749140352 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3153116 Document Type: Article

Times cited : (99)

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