Chemical lift-off of (1122) semipolar GaN using periodic triangular cavities

Journal of Crystal Growth

Volumn 338, Issue 1, 2012, Pages 134-138

  Jeon, Dae Woo ^a,b   Lee, Seung Jae ^a   Jeong, Tak ^a   Baek, Jong Hyeob ^a   Park, Jae Woo ^b   Jang, Lee Woon ^b   Kim, Myoung ^b   Lee, In Hwan ^b   Ju, Jin Woo ^a  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

A1. Chemical etching; A3. Metalorganic chemical vapor deposition; B1. Semipolar GaN; B2. GaN substrate

Indexed keywords

CHEMICAL ETCHING; EPITAXIAL LATERAL OVERGROWTH; GAN SUBSTRATE; HYDRIDE VAPOR PHASE EPITAXY; LATERAL ETCHING; M-PLANE; RAMAN ANALYSIS; SEMIPOLAR; STRAIN-FREE; TRIANGULAR CAVITIES;

EPITAXIAL GROWTH; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; SAPPHIRE;

GALLIUM NITRIDE;

EID: 84655165000     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.11.014     Document Type: Article

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