Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

Journal of Alloys and Compounds

Volumn 509, Issue 6, 2011, Pages 2952-2956

  Oh, Tae Su ^a   Park, Ah Hyun ^a   Jeong, Hyun ^a   Kim, Hun ^a   Seo, Tae Hoon ^a   Lee, Yong Seok ^a   Jeong, Mun Seok ^b   Lee, Kang Jea ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Convex shaped patterned sapphire; GaN; Metalorganic chemical vapor deposition; Micro photoluminescence; Micro Raman scattering

Indexed keywords

GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRO-RAMAN SCATTERING; MICROPHOTOLUMINESCENCE; PATTERNED SAPPHIRE;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; RAMAN SCATTERING; SAPPHIRE; STRESS CONCENTRATION; VAPOR DEPOSITION;

GALLIUM ALLOYS;

EID: 78651363353     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.11.166     Document Type: Article

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