Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 473-476

  Shioda, Tomonari ^a   Yoshida, Hisashi ^a   Tachibana, Koichi ^a   Sugiyama, Naoharu ^a   Nunoue, Shinya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

epitaxial growth; green; LED; MOVPE; nitride semiconductors; QCSE

Indexed keywords

ALGAN; ASYMMETRIC BANDS; BARRIER LAYERS; DRIVING CURRENT; ELECTROLUMINESCENCE INTENSITY; EMISSION WAVELENGTH; EXTERNAL QUANTUM EFFICIENCY; GREEN; GREEN LEDS; INGAN/GAN; INTENSITY DROP; LIGHT OUTPUT POWER; NITRIDE SEMICONDUCTORS; PHOTOLUMINESCENCE INTENSITIES; PIEZO-ELECTRIC FIELDS; QCSE; QUANTUM CONFINED STARK EFFECT; SPECTRAL RANGE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84857724731     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100356     Document Type: Article

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