Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 488-491

  Fong, W K ^a   Leung, K K ^a   Surya, Charles ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

A1. Multiple quantum wells; A1. Optical properties; A3. Epitaxial lateral overgrowth; B1. GaN

Indexed keywords

A1. OPTICAL PROPERTIES; ANNEALING PROCESS; B1. GAN; CONTROL STRUCTURE; DRY-ETCH; EPITAXIAL LATERAL OVERGROWN; EPITAXIAL LATERAL OVERGROWTH; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCIES; GAN EPILAYERS; GAN LAYERS; GAN/INGAN; HIGH QUALITY; INTERNAL QUANTUM EFFICIENCY; MATERIAL QUALITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; NANO SCALE; NI CLUSTERS; PL INTENSITY; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THREADING DISLOCATION;

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; EPILAYERS; EPITAXIAL GROWTH; EXTRACTION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; QUANTUM EFFICIENCY; SILICON COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79952736573     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.048     Document Type: Conference Paper

References (11)

1. H.K. Cho, J.Y. Lee, K.S. Kim, G.M. Yang, J.H. Song, and P.W. Yu Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition Journal of Applied Physics 89 2001 2617 2721
2. K. Yihwan, S.G. Subramanya, H. Siegle, J. Kruger, P. Perlin, E.R. Weber, S. Ruvimov, and Z. Lilliental-Weber GaN thin films by growth on Ga-rich GaN buffer layers Journal of Applied Physics 88 2000 6032 6036
3. D. Morita, A. Fujioka, T. Mukai, and M. Fukui Dislocation reduction mechanism in low-nucleation-density GaN growth using AlN templates Japanese Journal of Applied Physics 46 2007 2895 2900 (Pubitemid 47252642)
4. S. Kim, J. Oh, J. Kang, D. Kim, J. Won, J.W. Kim, and H.K. Cho Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage Journal of Crystal Growth 262 2004 7 13
5. W.K. Fong, K.K. Leung, and C. Surya Si doping of metalorganic chemical vapor deposition grown gallium nitride using ditertiarybutyl silane metalorganic source Journal of Crystal Growth 298 2007 239 242 (Pubitemid 46149668)
6. T.S. Zheleva, O.H. Nam, W.M. Ashmawi, J.D. Griffin, and R.F. Davis Lateral epitaxy and dislocation density reduction in selectively grown GaN structures Journal of Crystal Growth 222 2001 706 718 (Pubitemid 32196439)
7. B. Beaumont, V. Bousquet, P. Vennégués, M. Vaille, A. Bouillé, P. Gibart, S. Dassonneville, A. Amokrane, and B. Sieber A two-step method for epitaxial lateral overgrowth of GaN Physica Status Solidi A 176 1999 567 571 (Pubitemid 32082038)
8. 2 nanorod-array patterned sapphire template Applied Physics Letters 93 2008 081108-1 081108-3
9. Y.D. Wang, K.Y. Zang, S.J. Chua, S. Tripathy, H.L. Zhou, and C.G. Fonstad Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth Applied Physics Letters 88 2006 211908-1 211908-3
10. K.K. Leung, W.K. Fong, P.K.L. Chan, and C. Surya Physical mechanisms for hot-electron degradation in GaN light-emitting diodes Journal of Applied Physics 107 2010 073103-1 073103-6
11. 1-x/GaN multiple quantum wells Japanese Journal of Applied Physics 45 2006 8719 8723 (Pubitemid 47253134)