Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

Applied Physics Letters

Volumn 99, Issue 9, 2011, Pages

  Kuo, Yen Kuang ^a   Wang, Tsun Hsin ^a   Chang, Jih Yuan ^a   Tsai, Miao Chan ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ELECTRONS AND HOLES; ENERGY-BAND DIAGRAM; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; PERFORMANCE CURVE; RADIATIVE RECOMBINATION RATE; SIMULATION RESULT; UNIFORM DISTRIBUTION;

BAND STRUCTURE; DIODES; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 80052534025     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633268     Document Type: Article

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