Microfabrication of Si and GaAs by plasma etching process using bacterial cells as an etching mask material

Japanese Journal of Applied Physics

Volumn 51, Issue 8 PART 1, 2012, Pages

  Matsutani, Akihiro ^a   Takada, Ayako ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

B-Y IONS; BACTERIAL CELLS; DISCHARGE PLASMA; DRY ETCHING PROCESS; ELECTRON BEAM RESIST; ESCHERICHIA COLI CELLS; ETCHING MASKS; ETCHING RATE; GAAS; LOW PRESSURE PLASMA; MASK MATERIALS; NANO-IMPRINT; PLASMA ETCHING PROCESS;

CELLS; DEGRADATION; ELECTRON BEAMS; ESCHERICHIA COLI; GALLIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA; MICROANALYSIS; MICROFABRICATION; PLASMA APPLICATIONS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SILICON;

CYTOLOGY;

EID: 84864644669     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.087001     Document Type: Article

References (33)

1. E. Tegou, E. Gogolides, P. Argitis, I. Paptis, G. Meneghini, and Z. Cui: Jpn. J. Appl. Phys. 37 (1998) 6873.
2. A. Tanaka, H. Ban, and Y. Kawai: Jpn. J. Appl. Phys. 28 (1989) 2099.
3. H. Ban, A. Tanaka, Y. Kawai, and K. Deguchi: Jpn. J. Appl. Phys. 28 (1989) L1863.
4. S. L. Norman and M. P. Singh: Appl. Opt. 14 (1975) 818.
5. Y. Mimura, T. Ohkubo, T. Takeuchi, and K. Sekikawa: Jpn. J. Appl. Phys. 17 (1978) 541.
6. T. Ishii, Y. Murata, and K. Shigehara: Jpn. J. Appl. Phys. 40 (2001) L478.
7. T. Ishii, H. Nozawa, and T. Tamamura: Appl. Phys. Lett. 70 (1997) 1110.
8. T. Shibata, T. Ishii, H. Nozawa, and T. Tamamura: Jpn. J. Appl. Phys. 36 (1997) 7642.
9. T. Tada and K. Kanayama: Jpn. J. Appl. Phys. 35 (1996) L63.
10. A. P. G. Robinson, R. E. Palmer, T. Tada, T. Kanayama, and J. A. Preece: Appl. Phys. Lett. 72 (1998) 1302.
11. A. Matsutani, F. Koyama, and K. Iga: Jpn. J. Appl. Phys. 37 (1998) 4211.
12. P. Mukherjee, T. H. Zurbuchen, and L. J. Guo: Nanotechnology 20 (2009) 25301.
13. M. Bender, A. Fuchs, U. Plachetka, and H. Kurz: Microelectron. Eng. 83 2006) 827.
14. S. Y. Chou, P. R. Krauss, and P. J. Renstrom: J. Vac. Sci. Technol. B 14 (1996) 4129.
15. M. D. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S. A. Lyon, and. Y. Chou: Appl. Phys. Lett. 84 (2004) 5299.
16. Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Williams: Nano Lett. 4 (2004) 245.
17. Z. Yu, H. Gao, W. Wu, H. Ge, and S. Y. Chou: J. Vac. Sci. Technol. B 21 (2003) 2874.
18. S. H. Kim, K. D. Lee, J. Y. Kim, M. K. Kwon, and S. J. Park: Nanotechnology 18 (2007) 055306.
19. A. Matsutani, Y. Hasidume, H. Ohtsuki, and F. Koyama: Jpn. J. Appl. hys. 51 (2012) 06FF05.
20. D. Purevdorj, N. Igura, N. M. Shimoda, O. Ariyada, and I. Hayakawa: Lett. Appl. Microbiol. 37 (2003) 31.
21. S. Lerouge, M. R. Wertheimer, and L. H. Yahia: Plasmas Polym. 6 (2001) 175.
22. K. S. Lassen, B. Nordby, and R. Grün: J. Biomed. Mater. Res. 65B (2003) 239.
23. H. Ohkawa, T. Akitsu, M. Tsuji, H. Kimura, and K. Fukushima: Plasma Process. Polym. 2 (2005) 120.
24. H. Ohkawa, T. Akitsu, M. Tsuji, H. Kimura, M. Kogoma, and K. Fukushima: Surf. Coatings Technol. 200 (2006) 5829.
25. T. Akitsu, H. Ohkawa, M. Tsuji, H. Kimura, and M. Kogoma: Surf. oatings Technol. 193 (2005) 29.
26. F. Rossi, O. Kylian, H. Rauscher, D. Gilliland, and L. Sirghi: Pure Appl. Chem. 80 (2008) 1939.
27. M. Nagatsu, F. Terashita, and Y. Koide: Jpn. J. Appl. Phys. 42 (2003) L856.
28. J. Opretzka, J. Benedikt, P. Awakowicz, J. Wunderlich, and A. Keudell: J. Phys. D 40 (2007) 2826.
29. N. Hayashi, W. Guan, S. Tsutsui, T. Tomari, and Y. Handa: Jpn. J. Appl. Phys. 45 (2006) 8358.
30. A. Sakudo and H. Shintani: Sterilization and Disinfection by Plasma (Nova Science, New York, 2011) p. 19.
31. A. Matsutani, H. Ohtsuki, and F. Koyama: Jpn. J. Appl. Phys. 38 (1999) 4260.
32. A. Matsutani and A. Takada: Jpn. J. Appl. Phys. 49 (2010) 127201.
33. A. Matsutani, H. Ohtsuki, and F. Koyama: Jpn. J. Appl. Phys. 47 (2008) 5113.