Vertical and smooth etching of InP by Cl2/Xe inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 7 B, 1999, Pages 4260-4261

  Matsutani, Akihiro ^a   Ohtsuki, Hideo ^b   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Dry etching; Inductively coupled plasma (ICP); InP, Cl2 Xe

Indexed keywords

CHLORINE; FLOW OF FLUIDS; PLASMA ETCHING; PRESSURE; SUBSTRATES; TEMPERATURE; XENON;

GAS PRESSURE; INDUCTIVELY COUPLED PLASMA;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033339916     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4260     Document Type: Article

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