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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6873-6876

Silylation and dry development of chemically amplified resists SAL601, AZPN114, and epoxidised resist (EPR1) for high resolution electron-beam lithography

(6) Tegou, Evangelia a Gogolides, Evangelos a Argitis, Panagiotis a Raptis, Loannis a Meneghini, Giancarlo b Cui, Zheng c

a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

b CSELT (Italy)

c RUTHERFORD APPLETON LABORATORY (United Kingdom)

Author keywords

AZPN114; Chemically amplified resists; Dry development; Electron beam lithography; Epoxy resist; SAL601; Silylation

Indexed keywords

EID: 0000396361 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.6873 Document Type: Article

Times cited : (6)

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