C60 resist mask of electron beam lithography for chlorine-based reactive ion beam etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 4211-4212

  Matsutani, Akihiro ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

C60; Electron beam; Fullerene; Reactive ion beam etching; Resist

Indexed keywords

ELECTRON BEAMS; ETCHING; FULLERENES; ION BEAMS;

RESIST;

ELECTRON BEAM LITHOGRAPHY;

EID: 0032114644     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4211     Document Type: Article

References (5)

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5. A. Matsutani, T. Tadokoro, F. Koyama and K. Iga: Plasma Properties, Deposition and Etching Material, eds. J. J. Pouch and S. A. Alterovitz: Mater. Sci. Forum 140-142 (1993) 641.