High-aspect-ratio nanometer-pattern fabrication using fullerene-incorporated nanocomposite resists for dry-etching application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7642-7645

  Shibata, Tomohiro ^a   Ishii, Tetsuyoshi ^a   Nozawa, Hiroshi ^a   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

C60; C70; Dry etching resistance; Fullerene; High aspect ratio; Nanometer pattern fabrication; Resist performance

Indexed keywords

ASPECT RATIO; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; FULLERENES; NANOSTRUCTURED MATERIALS; REACTIVE ION ETCHING;

DRY ETCHING RESISTANCE;

NANOTECHNOLOGY;

EID: 0031388185     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7642     Document Type: Article

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