Microfabrication of Si-based high-index-contrast-grating structure by thermal nanoimprint lithography and Cl 2/Xe-inductively coupled plasma etching

Japanese Journal of Applied Physics

Volumn 51, Issue 6 PART 2, 2012, Pages

  Matsutani, Akihiro ^a   Hashidume, Yuuki ^a   Ohtsuki, Hideo ^b   Koyama, Fumio ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED PLASMA; DEVICE APPLICATION; ETCHED SURFACE; SI-BASED; THERMAL NANOIMPRINT LITHOGRAPHY; VERTICAL ETCHING;

INDUCTIVELY COUPLED PLASMA; MEMS; MICROANALYSIS; MICROFABRICATION; NANOIMPRINT LITHOGRAPHY; OPTICAL DEVICES; PHOTONIC CRYSTALS;

SILICON;

EID: 84863326120     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.06FF05     Document Type: Article

References (31)

1. C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. J. Chang-Hasnain: IEEE Photonics Technol. Lett. 16 (2004) 518.
2. M. Shokooh-Saremi and R. Magnusson: Opt. Express 16 (2008) 18249.
3. Y. Zhou, M. C. Y. Huang, C. Chase, V. Karagodsky, M. Moewe, B. Pesala, F. G. Sedgwick, and C. J. Chang-Hasnain: IEEE J. Sel. Top. Quantum Electron. 15 (2009) 1485.
4. S. M. Norton, T. Erdogan, and G. M. Morris: J. Opt. Soc. Am. A 14 (1997) 629.
5. Z. Wang, T. Sang, L. Wang, J. Zhu, Y. Wu, and L. Chen: Appl. Phys. Lett. 88 (2006) 251115.
6. J. Ye, Y. Kanamori, F. R. Hu, and K. Hane: Optik 121 (2010) 1389.
7. R. Magnusson, D. Shin, and Z. S. Liu: Opt. Lett. 23 (1988) 612.
8. D. W. Peters, R. R. Boye, J. R. Wendt, R. A. Kellogg, S. A. Kemme, T. R. Carter, and S. Samora: Opt. Lett. 35 (2010) 3201.
9. Y. Ding and R. Magnusson: Opt. Express 12 (2004) 5661.
10. Y. Ding and R. Magnusson: Opt. Lett. 29 (2004) 1135.
11. C. Vieu, F. Carcenac, A. Pépin, Y. Chen, M. Mejias, A. Lebib, L. Manin-Ferlazzo, L. Couraud, and H. Launois: Appl. Surf. Sci. 164 (2000) 111.
12. P. Mukherjee, T. H. Zurbuchen, and L. J. Guo: Nanotechnology 20 (2009) 325301.
13. M. Bender, A. Fuchs, U. Plachetka, and H. Kurz: Microelectron. Eng. 83 (2006) 827.
14. S. Y. Chou, P. R. Krauss, and P. J. Renstrom: J. Vac. Sci. Technol. B 14 (1996) 4129.
15. M. D. Austin, H. Ge, W. Wu, M. Li, Z. Yu, D. Wasserman, S. A. Lyon, and S. Y. Chou: Appl. Phys. Lett. 84 (2004) 5299.
16. Z. Li, Y. Chen, X. Li, T. I. Kamins, K. Nauka, and R. S. Williams: Nano Lett. 4 (2004) 245.
17. Z. Yu, H. Gao, W. Wu, H. Ge, and S. Y. Chou: J. Vac. Sci. Technol. B 21 (2003) 2874.
18. S. H. Kim, K. D. Lee, J. Y. Kim, M. K. Kwon, and S. J. Park: Nanotechnology 18 (2007) 55306.
19. S. Tachi, K. Tsujimoto, S. Arai, and T. Kure: J. Vac. Sci. Technol. A 9 (1991) 796.
20. S. Tachi, K. Tsujimoto, and S. Okudaira: Appl. Phys. Lett. 52 (1988) 616.
21. T. D. Bestwick, G. S. Oehrlein, and D. Angell: Appl. Phys. Lett. 57 (1990) 431.
22. M. J. M. Vugts, L. J. F. Hermans, and H. C. W. Beijerinck: J. Vac. Sci. Tecnol. A 14 (1996) 2820.
23. A. Matsutani, F. Koyama, and K. Iga: Jpn. J. Appl. Phys. 30 (1991) 2123.
24. A. Matsutani, F. Koyama, and K. Iga: Jpn. J. Appl. Phys. 37 (1998) 6655.
25. A. Matsutani, H. Ohtsuki, F. Koyama, and K. Iga: Jpn. J. Appl. Phys. 38 (1999) 4260.
26. A. Matsutani, H. Ohtsuki, and F. Koyama: Jpn. J. Appl. Phys. 42 (2003) L1414.
27. A. Matsutani, H. Ohtsuki, and F. Koyama: Jpn. J. Appl. Phys. 45 (2006) 8374.
28. Y. Osano and K. Ono: J. Vac. Sci. Technol. B 26 (2008) 1425.
29. M. G. Moharam and T. K. Gaylord: J. Opt. Soc. Am. 71 (1981) 811.
30. M. G. Moharam, E. B. Grann, and D. A. Pommet: J. Opt. Soc. Am. A 12 (1995) 1068.
31. M. Nagayoshi, K. Oka, Y. Komai, W. Klaus, and K. Kodate: Nihon Joshi Daigaku Kiyo Rigakubu 14 (2006) 13 [in Japanese].