Design considerations for bulk micromachined 6H-SiC high-G piezoresistive accelerometers

Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2002, Pages 618-622

  Okojie, Robert S ^a   Atwell, Andrew R ^b   Kornegay, Kevin T ^b   Roberson, Scott L ^c   Beliveau, Alain ^d  

^a NASA GLENN RESEARCH CENTER   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d APPLIED RESEARCH ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELEROMETERS; COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; FINITE ELEMENT METHOD; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; SILICON CARBIDE; SINGLE CRYSTALS;

IMPACT SENSING; PIEZORESISTIVE ACCELEROMETERS;

PIEZOELECTRIC DEVICES;

EID: 0036123967     PISSN: 10846999     EISSN: None     Source Type: Journal    
DOI: 10.1109/MEMSYS.2002.984347     Document Type: Article

References (13)

1. Strap-down microelectromechanical (MEMS) sensors for high-G munition applications
2. Characterization of silicon carbide and commercial-off-the-shelf (COTS) components for high-g launch and EM applications
3. Characterization of monolithic n-type 6H-SiC peizoresistive sensing elements
4. Silicon in mechanical sensors
5. An aluminum nitride package for 600°C and beyond
6. Vhg impact test set