β-SiC films on SOI substrates for high temperature applications

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1448-1450

  Reichert, W ^a   Obermeier, E ^a   Stoemenos, J ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Bonded SOI; High temperature; SiCOI; SiC on SOI

Indexed keywords

EID: 0040312149     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00078-2     Document Type: Article

References (3)

1. G. Krötz, Ch. Wagner, W. Legner, H. Sonntag, H. Müller, G. Müller, Inst. Phys. Conf. Ser. No 142, Proceedings of the Sixth Intern. Conf. on Silicon Carbide and Related Materials, Kyoto Japan, 1995, p. 829.
2. A.J. Steckl, C. Yuan, Q.-Y. Tong, U. Gösele, M.J. Loboda, J. Electrochem. Soc. 141 (6) (1994) L166-L168.
3. W. Reichert, R. Lossy, J.M. González Sirgo, E. Obermeier, J. Stoemenos, Inst. Phys. Conf. Ser. No 142, Proceedings of the Sixth Intern. Conf. on Silicon Carbide and Related Materials, Kyoto Japan, 1995, p. 129.