Silicon-carbide MESFET-based 400°C MEMS sensing and data telemetry

IEEE Sensors Journal

Volumn 5, Issue 6, 2005, Pages 1389-1394

  Wang, Run ^b   Ko, Wen H ^a,c   Young, Darrin J ^b  

^a IEEE   (United States)

^b Case Western Reserve University   (United States)

^c American Institute of Medical and Biological Engineering   (United States)

Author keywords

High temperature sensing; Microelectromechanical systems (MEMS) sensor; Silicon carbide (SiC) MESFET; Telemetry

Indexed keywords

HIGH-TEMPERATURE SENSING; SILICON-CARBIDE (SIC) MESFET;

ANTENNAS; ELECTRIC INDUCTORS; HIGH TEMPERATURE EFFECTS; MESFET DEVICES; MICROELECTROMECHANICAL DEVICES; SILICON CARBIDE; TELEMETERING;

MICROSENSORS;

EID: 29044434517     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2005.858927     Document Type: Article

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