Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2872-2877

  Eickhoff, M ^a   Moller M ^b   Kroetz, G ^c   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b DEUTSCHE BAHN AG   (Germany)

^c AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; MICROMACHINING; MICROSENSORS; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PIEZOELECTRICITY; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; SINGLE CRYSTALS;

CRYSTAL QUALITY; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); PIEZORESISTIVITY; PRESSURE SENSORS; TEMPERATURE SENSORS;

SILICON CARBIDE;

EID: 4944235378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1775052     Document Type: Article

References (30)

1. J. S. Shor, D. Goldstein, and A. D. Kurtz, IEEE Trans. Electron Devices 40, 1093 (1993).
2. M. Bruel, Electron. Lett. 31, 1201 (1995).
3. G. K. Celler and S. Cristoloveanu, J. Appl. Phys. 93, 4955 (2003).
4. C. K. Moon, H. J. Song, J. K. Kim, H. H. Park, S. J. Jang, J.-B. Yoo, H.-R. Park, and B.-T. Lee, J. Mater. Res. 16, 24 (2001).
5. H. Möller, G. Krötz, M. Eickhoff, A. Nielsen, A. Papaioannou, and J. Stoemenos, J. Electrochem. Soc. 148, G16 (2001).
6. J. Camassel, J. Vac. Sci. Technol. B 16, 1648 (1998).
7. M. Eickhoff, H. Möller, G. Kroetz, J. V. Berg, and R. Ziermann, Sens. Actuators, A A74, 56 (1999).
8. R. Ziermann, J. v. Berg, W. Reichert, E. Obermeier, M. Eickhoff, and G. Krötz, Proceedings of 1997 International Conference on Solid-State Sensors and Actuators, Chicago, p. 1411.
9. C.-H. Wu, S. Stefanescu, H.-I. Kuo, C. A. Zorman and M. Mehregany, Proceedings of 2001 International Conference on Transducers'01/Eurosensors XV. Munich, edited by E. Obermeier (Springer, Berlin, 2001), p. 514.
10. T. Toriyama and S. Sugiyama, Appl. Phys. Lett. 81, 2797 (2002).
11. C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956).
12. Y. Omuma, H. Seki, K. Kamimura, T. Homma, and C. H. Yi, Techn. Digest of the 8th Sensor Symposium, edited by T. Matsuo (1989), p. 41.
13. J. Strass, M. Eickhoff, and G. Krötz, Proc. Transducers 2, 1439 (1997).
14. Y. Onuma, F. Nagaune, and K. Kamimura, Springer Proc. Phys. 34, 142 (1989).
15. T. Homma, K. Kamimura, H. Y. Cai, and Y. Onuma, Sens. Actuators, A 40, 93 (1994).
16. V. Mosser, J. Suski, J. Goss, and E. Obermeier, Sens. Actuators, A 28, 113 (1991).
17. J. Y. W. Seto, J. Appl. Phys. 47, 4780 (1976).
18. J. A. Powell, L. G. Matus, and M. A. Kuczmarski, J. Electrochem. Soc. 101, 1558 (1987).
19. J. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).
20. M. Eickhoff, H. Möller, J. Stoemenos, S. Zappe, G. Krötz, and M. Stutzmann, J. Appl. Phys. 95, 7908 (2004).
21. M. Eickhoff and M. Stutzmann, J. Appl. Phys. 96, 2878 (2004).
22. SOITEC Silicon On Insulator Technologies, Parc technologiques des Fontaines, 38190 Bernin, Frankreich.
23. H. Möller, M. Eickhoff, M. Rapp, H. W. Grueninger, and G. Krötz, Appl. Phys. A: Mater. Sci. Process. 68, 1 (1999).
24. C. Richter, K. Espertshuber, C. Wagner, M. Eickhoff, and G. Krötz, Mater. Sci. Eng., B B46, 160 (1997).
25. G. L. Waytwna, H. A. Hoff, D. I. Ma, I. P. Isaacson, M. L. Rebbert, C. Marrian, and J. S. Suehle, J. Electrochem. Soc. 143, 2392 (1996).
26. M. Eickhoff, H. Möller, M. Rapp, and G. Krötz, Thin Solid Films 345, 197 (1999).
27. Cree Inc., 4600 Silicon Drive, Durham, NC 27713.
28. H. Möller et al., Inst. Phys. Conf. Ser. 142, 497 (1996).
29. D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, and W. Skorupa, J. Electrochem. Soc. (in press).
30. F. Letertre et al., Mater. Sci. Forum 151, 389-393 (2002).