Distinct photocurrent response of individual GaAs nanowires induced by n-type doping

ACS Nano

Volumn 6, Issue 7, 2012, Pages 6005-6013

  Xia, Hui ^a   Lu, Zhen Yu ^a   Li, Tian Xin ^a   Parkinson, Patrick ^b   Liao, Zhi Ming ^c   Liu, Fu Hao ^a   Lu, Wei ^a   Hu, Wei Da ^a   Chen, Ping Ping ^a   Xu, Hong Yi ^c   Zou, Jin ^c   Jagadish, Chennupati ^b  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

GaAs nanowire; intentional doping; minority carrier lifetime; photoconductive property; photoelectric device; surface states

Indexed keywords

BULK EFFECT; CONDUCTIVE ATOMIC FORCE MICROSCOPY; GAAS; HOLE LIFETIME; MINORITY CARRIER LIFETIMES; N-DOPED; N-TYPE DOPING; PHOTOCONDUCTIVE PROPERTIES; PHOTOCURRENT RESPONSE; PHOTOELECTRIC BEHAVIOR; RECOMBINATION RATE; RESPONSIVITY; SCHOTTKY CONTACTS; SEMICONDUCTOR NANOSTRUCTURES; SIGNIFICANT IMPACTS; SINGLE NANOWIRES;

ALUMINUM GALLIUM ARSENIDE; ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDE; PHOTOCONDUCTIVITY; PHOTOELECTRIC DEVICES; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SURFACE STATES;

NANOWIRES;

EID: 84864238300     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300962z     Document Type: Article

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