Reduced subpicosecond electron relaxation in GaNx As1-x

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Sinning, S ^a   Dekorsy, T ^a   Helm, M ^a   Mussler, G ^b   Daweritz L ^b   Ploog, K H ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC PROPERTIES; HAMILTONIANS; INTEGRATION; MOLECULAR BEAM EPITAXY; PHONONS;

BAND GAP ENERGY; ELECTRON RELAXATION; ELECTRONIC STATES; INTRABAND CARRIER RELAXATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 20844435121     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1904709     Document Type: Article

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