SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 9, 2009, Pages

Scanning capacitance microscopy investigation on InGaAs/InP avalanche photodiode structures: Light-induced polarity reversal

(6) Yin, Hao a Li, Tianxin a Wang, Wenjuan a Hu, Weida a Lin, Le a Lu, Wei a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION LAYER; ATOMIC FORCE MICROSCOPES; CARRIER DISTRIBUTIONS; CROSS-SECTIONAL SCANNING; DISTRIBUTION PROPERTY; INGAAS/INP AVALANCHE PHOTODIODES; PHOTO-CARRIERS; PHOTOELECTRIC PROCESS; POLARITY REVERSAL; SCANNING CAPACITANCE MICROSCOPY; SIGNAL POLARITY;

AVALANCHE PHOTODIODES; CAPACITANCE; PHOTODIODES;

PHOTOELECTRICITY;

EID: 69949174681 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3216847 Document Type: Article

Times cited : (20)

References (17)

1
- 0037867862
- 0021-8979,. 10.1063/1.334506
- J. R. Matey and J. Blanc, J. Appl. Phys. 0021-8979 57, 1437 (1985). 10.1063/1.334506
- (1985) J. Appl. Phys. , vol.57 , pp. 1437
- Matey, J.R.¹ Blanc, J.²

2
- 1542572704
- 0034-6748,. 10.1063/1.1641161
- E. Bussmann and C. C. Williams, Rev. Sci. Instrum. 0034-6748 75, 422 (2004). 10.1063/1.1641161
- (2004) Rev. Sci. Instrum. , vol.75 , pp. 422
- Bussmann, E.¹ Williams, C.C.²

3
- 0037132175
- 0003-6951,. 10.1063/1.1522819
- P. A. Rosenthal, Y. Taur, and E. T. Yu, Appl. Phys. Lett. 0003-6951 81, 3993 (2002). 10.1063/1.1522819
- (2002) Appl. Phys. Lett. , vol.81 , pp. 3993
- Rosenthal, P.A.¹ Taur, Y.² Yu, E.T.³

4
- 41549084209
- 1071-1023,. 10.1116/1.2890705
- J. Sumner, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, J. Vac. Sci. Technol. B 1071-1023 26, 611 (2008). 10.1116/1.2890705
- (2008) J. Vac. Sci. Technol. B , vol.26 , pp. 611
- Sumner, J.¹ Oliver, R.A.² Kappers, M.J.³ Humphreys, C.J.⁴

5
- 0348041804
- 0003-6951,. 10.1063/1.1625109
- K. Maknys, O. Douh́ret, and S. Anand, Appl. Phys. Lett. 0003-6951 83, 4205 (2003). 10.1063/1.1625109
- (2003) Appl. Phys. Lett. , vol.83 , pp. 4205
- Maknys, K.¹ Douh́ret, O.² Anand, S.³

6
- 40549131888
- Doping characterization of InAsGaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
- DOI 10.1063/1.2889938
- Z. Y. Zhao, W. M. Zhang, C. Yi, A. D. Stiff-Robets, B. J. Rodriguez, and A. P. Baddorf, Appl. Phys. Lett. 0003-6951 92, 092101 (2008). 10.1063/1.2889938 (Pubitemid 351357381)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 092101
- Zhao, Z.Y.¹ Zhang, W.M.² Yi, C.³ Stiff-Roberts, A.D.⁴ Rodriguez, B.J.⁵ Baddorf, A.P.⁶

7
- 46049095690
- 0003-6951,. 10.1063/1.2946657
- F. Roccaforte, F. Giannazzo, F. Iucolano, C. Bongiorno, and V. Raineri, Appl. Phys. Lett. 0003-6951 92, 252101 (2008). 10.1063/1.2946657
- (2008) Appl. Phys. Lett. , vol.92 , pp. 252101
- Roccaforte, F.¹ Giannazzo, F.² Iucolano, F.³ Bongiorno, C.⁴ Raineri, V.⁵

8
- 79956024349
- Characterization of GaAs/AlGaAs laser mesas regrown with semi-insulating GaInP by scanning capacitance microscopy
- DOI 10.1063/1.1491607
- O. Douheret, S. Anand, C. Angulo Barrios, and S. Lourdudoss, Appl. Phys. Lett. 0003-6951 81, 960 (2002). 10.1063/1.1491607 (Pubitemid 34945735)
- (2002) Applied Physics Letters , vol.81 , Issue.6 , pp. 960
- Douheret, O.¹ Anand, S.² Angulo Barrios, C.³ Lourdudoss, S.⁴

9
- 0001781954
- 1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy
- DOI 10.1063/1.1335840
- D. M. Schaadt, E. J. Miller, E. T. Yu, and J. M. Redwing, Appl. Phys. Lett. 0003-6951 78, 88 (2001). 10.1063/1.1335840 (Pubitemid 33661766)
- (2001) Applied Physics Letters , vol.78 , Issue.1 , pp. 88-90
- Schaadt, D.M.¹ Miller, E.J.² Yu, E.T.³ Redwing, J.M.⁴

10
- 0000385987
- 0026-2692, () 10.1016/0026-2692(94)90136-8;, Prog. Quantum Electron. 0079-6727 27, 59 (2003). 10.1016/S0079-6727(02)00024-1
- S. C. Shen, Microelectron. J. 0026-2692 25, 713 (1994) 10.1016/0026-2692(94)90136-8; A. Rogalski, Prog. Quantum Electron. 0079-6727 27, 59 (2003). 10.1016/S0079-6727(02)00024-1
- (1994) Microelectron. J. , vol.25 , pp. 713
- Shen, S.C.¹ Rogalski, A.²

11
- 0037631727
- 0003-6951,. 10.1063/1.1581987
- M. N. Chang, C. Y. Chen, F. M. Pan, J. H. Lai, W. W. Wan, and J. H. Liang, Appl. Phys. Lett. 0003-6951 82, 3955 (2003). 10.1063/1.1581987
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3955
- Chang, M.N.¹ Chen, C.Y.² Pan, F.M.³ Lai, J.H.⁴ Wan, W.W.⁵ Liang, J.H.⁶

12
- 0001056859
- 0031-9007,. 10.1103/PhysRevLett.44.420
- W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 0031-9007 44, 420 (1980). 10.1103/PhysRevLett.44.420
- (1980) Phys. Rev. Lett. , vol.44 , pp. 420
- Spicer, W.E.¹ Lindau, I.² Skeath, P.³ Su, C.Y.⁴ Chye, P.⁵

13
- 69949170904
- Scanning Capacitance Microscopy, Digital Instruments Veeco Metrology GrouSupport Note No. 289, Rev. A.
- Scanning Capacitance Microscopy, Digital Instruments Veeco Metrology Group Support Note No. 289, Rev. A, 2000.
- (2000)

14
- 0034318263
- Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy
- DOI 10.1116/1.1326947
- S. Shin, J. -I. Kye, U. H. Pi, Z. G. Khim, J. W. Hong, S. Park, and S. Yoon, J. Vac. Sci. Technol. B 1071-1023 18, 2664 (2000). 10.1116/1.1326947 (Pubitemid 32088087)
- (2000) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.18 , Issue.6 , pp. 2664-2668
- Shin, S.¹ Kye, J.-I.² Pi, U.H.³ Khim, Z.G.⁴ Hong, J.W.⁵ Park, S.-I.⁶ Yoon, S.⁷

15
- 0003675250
- (Wiley, New York).
- S. M. Sze, Semiconductor Devices Physics and Technology (Wiley, New York, 2001).
- (2001) Semiconductor Devices Physics and Technology
- Sze, S.M.¹

16
- 69949136991
- (unpublished).
- H. Yin, T. X. Li, W. D. Hu, W. J. Wang, and W. Lu (unpublished).
- Yin, H.¹ Li, T.X.² Hu, W.D.³ Wang, W.J.⁴ Lu, W.⁵

17
- 0004071496
- (Wiley, New York).
- D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
- (1990) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.