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Advanced Materials

Volumn 23, Issue 37, 2011, Pages 4306-4311

Minority carrier lifetimes and surface effects in VLS-grown axial p-n junction silicon nanowires

(5) Jung, Yeonwoong a Vacic, Aleksandar a Perea, Daniel E b Picraux, Samuel T b Reed, Mark A a

a YALE UNIVERSITY (United States)

b LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

minority carrier lifetimes; photovoltaic devices; reverse recovery transients; silicon nanowires; surface effects

Indexed keywords

MINORITY CARRIER LIFETIMES; PHOTOVOLTAIC DEVICES; REVERSE RECOVERY; SILICON NANOWIRES; SURFACE EFFECTS;

CARRIER LIFETIME; ELECTRIC PROPERTIES; NANOWIRES; PHOTOVOLTAIC EFFECTS; POWER QUALITY; SEMICONDUCTOR JUNCTIONS; TRANSIENTS;

ELECTRIC WIRE;

GOLD; NANOWIRE; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CATALYSIS; GOLD; NANOWIRES; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 80054708497 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201101429 Document Type: Article

Times cited : (32)

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